Soojin,
Sometimes when the application will allow for it, all we do here is an
aggressive O2 and/or Argon plasma descum on a Drytek or Matrix system.
Anywhere from 30sec 100W 110deg to 3min 300W 110deg would be typical.  In
oxygen the latter etches about 2-3um and the former 1000A of photoresist; we
use photoresist etching as a process monitor for oxygen plasma.

Sometimes all the solvent steps and rinse operations just plain leaves more
debris and defects then when you started, especially in lab environments.
If your application can allow it, just do a simple descum operation instead.

Justin

Justin C. Borski
MEMS Program Manager
Advanced MicroSensors Inc.
(508) 770 - 2088



-----Original Message-----
From: Soojin Oh [mailto:[email protected]]
Sent: Friday, September 13, 2002 4:13 PM
To: [email protected]
Subject: [mems-talk] Wafer cleaning


For vacuum evaporation, how do you clean your wafers?
What I did was several baths of organic solvents
(Acetone, MeOH, EtOH) and water followed by UV-Ozone,
and finally "Piranha" bath cleaning. Finally I rinse
wafers in DI water and blow dry w/ N2 gas. But after
metal deposition I can still see some particular
impurities apparently imbedded underneath. What should
I do? Thank you for any suggestions and advices.

-Soojin
UNC-CH



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