Hi, MEMS folks
     I've been working on releasing SiO2 cantilever beams from Si with KOH wet
etching. SiO2 beams was attached to Si layer at one side. The temperature is 80
degree-C and stirring is 220RPM. The etching time is about 15mins. By
caculation, only 15um Si layer needs to be etched away to release cantilever
beam. I didn't get satisfactory etching selectivity on Si/SiO2 etching rate.
SiO2 beams began to be etched even before Si was cleaned. The resulted
cantilever beam wasn't integrated. Do you have some suggestions about how to
increase the etching selectivity or any ideas about releasing SiO2 cantilever
beams from Si. Thanks.

Best regards

Yanjun(David) Tang

Graduate student
Institute for Micromanufacturing
Louisiana Tech University

1401 Tech Farm Rd. Apt. #238, Ruston, LA 71270, USA
Email: yta001@coes.latech.edu
          tang_yanjun@yahoo.com

Tel: 1-318-255-5133