Hi,
I am a postgraduate student to study how to reduce the polydepletion effect
in CMOS devices, I have an idea to replace Boron with other dopant. Can any
body tell me whether galium is suitable to be used as p-type dopant in CMOS
fabrication? Besides that, what is the latest studies of reduce the
polydepletion effect and boron penetration as the device size is shrinking
now. Looking to hear from you all soon.

Thanks in advance.
Soon Aik