Hi,
I have a problem with my thermal wet silicon dioxide. It must grow in
the angle formed by an anisotropic etching (TMAH). The grooves are very
deep (all the wafer deth: 350 um). It seems like if the oxide grew badly
in this corners, and that it is fastly etched (more than it should be)
in the typical SiO2 etchants. Does anybody have any experience in this
field? It would be maybe better if I use a thick dry oxide? (I need it
quite thick)
Thanks in advance for your help,
Sandra

***********
Sandra Bermejo
Assistant professor
GDS, Grup Dispositius Semiconductors
UPC, Universitat Politècnica de Catalunya
Barcelona, Spain