Dear fellows,

I have a 6 um thick layer of AZ4562 photoresist, which was used to
pattern a 1 um thick Si3N4 layer, etched in CF4 plasma for about 35
min. The resist is cured for 45 min at 110 degC. There must be
something bad going on with the top of the resist layer, since it is
not removable in Aceton (which works fine, usually, with that kind of
resist). A O2 plasma strip for 10 min (1000W, 100 mTorr) after the
SiN etch doesn't help either. I can't etch too long in O2 plasma
since I have a polyimide layer on my wafer which should at least not
been underetched.

Any guess on how to remove AZ4562 after CF4 exposure? Without
attacking other materials (polyimide)?

I'm very grateful for any help or contact,

Joachim Oberhammer.
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Joachim Oberhammer, Dipl.-Ing.

Royal Institute of Technology (KTH)   Phone:    +46/(0)8 790 6250
Dep. of Signals, Sensors and Systems  Fax:      +46/(0)8 10 0858
Microsystem Technology (MST)          Mobile:   +46/(0)70 692 1858
                                       e-mail:   joachim.oberhammer@s3.kth.se
Osquldas väg 10                       homepage: http://www.s3.kth.se/mst/
SE-100 44 Stockholm, Sweden