removing AZ4562 photoresist after exposure to CF4
plasma
BERAUER,FRANK (HP-Singapore,ex7)
2002-10-29
Resist generally hardens under plasma bombardmend. 35min sounds
very long to me and I am not surprized that solvents don't work
any more.
Nanostrip (from Cyantech or Laporte) or Pirannah remove almost
any organic layer, but they also remove much else, so be careful
to check compatibility with your device.
Greetings,
Frank Berauer
Senior R&D Engineer
Hewlett-Packard Singapore
-----Original Message-----
From: Michael D Martin [mailto:[email protected]]
Sent: Tuesday, October 29, 2002 11:42 PM
To: [email protected]
Subject: Re: [mems-talk] removing AZ4562 photoresist after exposure to
CF4 plasma
There's a real handy product called Nanostrip, a mixture of buffered
acids, that is great for removing any type of resist. It will not damage
polyimide. You can get it here:
http://www.cyantek.com/catalog/cleansol.htm .
-Mike
>>> [email protected] 10/29/02 03:14AM >>>
Dear fellows,
I have a 6 um thick layer of AZ4562 photoresist, which was used to
pattern a 1 um thick Si3N4 layer, etched in CF4 plasma for about 35
min. The resist is cured for 45 min at 110 degC. There must be
something bad going on with the top of the resist layer, since it is
not removable in Aceton (which works fine, usually, with that kind of
resist). A O2 plasma strip for 10 min (1000W, 100 mTorr) after the
SiN etch doesn't help either. I can't etch too long in O2 plasma
since I have a polyimide layer on my wafer which should at least not
been underetched.
Any guess on how to remove AZ4562 after CF4 exposure? Without
attacking other materials (polyimide)?
I'm very grateful for any help or contact,
Joachim Oberhammer.
--
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--
Joachim Oberhammer, Dipl.-Ing.
Royal Institute of Technology (KTH) Phone: +46/(0)8 790 6250
Dep. of Signals, Sensors and Systems Fax: +46/(0)8 10 0858
Microsystem Technology (MST) Mobile: +46/(0)70 692 1858
e-mail:
[email protected]
Osquldas vSg 10 homepage:
http://www.s3.kth.se/mst/
SE-100 44 Stockholm, Sweden
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