A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: removing AZ4562 photoresist after exposure to
removing AZ4562 photoresist after exposure to
2002-10-30
Rob Hardman
removing AZ4562 photoresist after exposure to
Rob Hardman
2002-10-30
Hi Joachim,

If you would like to try something that is much more friendly towards metals and
the environment than Nano strip or piranha, both of which contain a combination
of sulfuric acid and peroxide, you may wish to try SVC-175 from Shipley. The
following is the introduction from their data sheet. If you wish to contact me
offline, I would be happy to send you the whole thing.

SVC-175 Is a high performance positive photoresist stripper formulation
developed by SVC to strip bulk photoresist and plasma etch residue from advanced
microelectronic devices. SVC-175 removes tenacious hard baked, high dose ion
implant, deep UV baked, and plasma etched resists without damage to sensitive
metal and oxide thin films. SVC-175 is an environmentally safe chemical that is
free from EPA-SARA reportable compounds, and has proven to be effective in
semiconductor wafer-fabrication (Front and Back End applications), advanced
Gallium Arsenide, flat panel display (FPD), photomask, optical media, and mag-
netic thin film head (MR/GMR) manufacturing.

Very Best Regards,
Rob Hardman

MicroChem Corp.




-----Original Message-----

From: Michael D Martin [mailto:[email protected]]

Sent: Tuesday, October 29, 2002 11:42 PM

To: [email protected]

Subject: Re: [mems-talk] removing AZ4562 photoresist after exposure to

CF4 plasma

Dear fellows,

I have a 6 um thick layer of AZ4562 photoresist, which was used to

pattern a 1 um thick Si3N4 layer, etched in CF4 plasma for about 35

min. The resist is cured for 45 min at 110 degC. There must be

something bad going on with the top of the resist layer, since it is

not removable in Aceton (which works fine, usually, with that kind of

resist). A O2 plasma strip for 10 min (1000W, 100 mTorr) after the

SiN etch doesn't help either. I can't etch too long in O2 plasma

since I have a polyimide layer on my wafer which should at least not

been underetched.

Any guess on how to remove AZ4562 after CF4 exposure? Without

attacking other materials (polyimide)?

I'm very grateful for any help or contact,

Joachim Oberhammer.

--



reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
The Branford Group
Mentor Graphics Corporation
Nano-Master, Inc.
University Wafer