A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Re: removing AZ4562 photoresist after exposure to CF4 plasma
Re: removing AZ4562 photoresist after exposure to CF4 plasma
2002-10-30
lakshmikanth namburi
Re: removing AZ4562 photoresist after exposure to CF4 plasma
lakshmikanth namburi
2002-10-30
32 min definetely seems too long. You are making teflon out of your resist. Its
getting too hot.
It should not take more than a couple of min to etch silicon nitride. If you
chamber is not
cleaned for a while and has lot of organics, that could be slowing down the
etch rate. If you
keep the etch time low, you will have no problems.
You may also try using SF6 or NF3 instead of CF4 to lower the etch time.
-Lakshmi Namburi

__________________________________________________
Do you Yahoo!?
HotJobs - Search new jobs daily now
http://hotjobs.yahoo.com/


reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
The Branford Group
Tanner EDA by Mentor Graphics
University Wafer
Process Variations in Microsystems Manufacturing