Dear all,

   I'm working on etch SiO2 by Ar ion-beam. The etch deep is about 1 micron. The
wall of micro-structure isn't steep even if the sample is titled. Can anybody
give me some advise how to improve it? Any information will be appreciated.


Best regard

Liu Gang
National Synchrotron Radiation Lab
Univ. of Sci.& Technol. of China
Hefei 230029
P. R. China
E-mail: liugang@ustc.edu.cn