A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: WHAT PHOTORESIST TO BE USED?
WHAT PHOTORESIST TO BE USED?
2002-12-03
sandhya sandhya
2002-12-03
[email protected]
WHAT PHOTORESIST TO BE USED?
[email protected]
2002-12-03
> -----Original Message-----
> From: sandhya sandhya [mailto:[email protected]]
> Sent: Monday, December 02, 2002 8:33 PM
> To: [email protected]
> Subject: [mems-talk] WHAT PHOTORESIST TO BE USED?
>
> Hello , I am facing a problem in selecting a resist that can
> withstand hot phosphoric acid etch and can be easily rmoved.
> Can you please kindly suggest me one such resist.Thanking
> yousincerelysandhya reddy

We have looked at several resists in hot phosphoric acid.
All etched rapidly or peeled.

A solution is to use something else as your mask.
We found that gold and niobium are not etched in hot phosphoric acid at 160 C.
Undoped LPCVD silicon dioxide is etched slowly, at 1-2 A/min.

        --Kirt Williams Agilent Technologies

reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Tanner EDA by Mentor Graphics
Nano-Master, Inc.
Harrick Plasma, Inc.
The Branford Group