Dear experts,

We only have the following gases available in our Oxford plasma lab ICP
etching system, SiCl4, Cl2, CH4, H2, SF6, O2, Ar and N2.  I want to etch
both SiO2 and Si3N4 (seperately, selectivey not needed, layers were CVD
grown on III-V, say GaAs substrates) with a acceptable etch rate, say
>50nm/min (preferably >100nm/min).  I prefer to use resist as mask.  Can
anybody give me a receipe such that I have something to start
optimzation with?  Thanks a lot.

Best regards,

Lihuan


--
Lihuan Song
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