Tough question; no simple answers here, nor short answers.
Best place to start:
P.M. Fahey, P.B. Griffin and J.D. Plummer, "Point Defects and Dopant
Diffusion in Silicon," Rev. Modern Phys., 61(2), p. 289, 1989.
However, a great deal has been published in the intervening years, esp.
on the RTP side of things. You should get a library to find out the
papers which reference this work. Also, check on the web for reference
lists, such as:
http://www.tec.ufl.edu/~flooxs/rel00/floops/references.html
Note that the grain structure in polysilicon takes an already-complex
problem, and renders it almost impossible, although there is certainly a
great deal which has been published on dopant diffusion and activiation
in polySi.
Good luck.
--
Albert K. Henning, Ph.D.
Director of Technology 650-617-0854
Redwood Microsystems, Inc. 650-326-1899 (FAX)
959 Hamilton Avenue [email protected]
Menlo Park, CA 94025 http://www.redwoodmicro.com
