Hi,
I think the H2 acts as a reducing agent. With the N2 used as a dilution.

Used, in the past,  for 'ashing' Chromium: substitute to using O2, which would
have volatised the Cr.

phil


>  from:    Joseph Chao 
>  date:    Tue, 24 Dec 2002 01:30:07
>  to:      [email protected]
>  subject: Re: [mems-talk] forming gas in O2/CF4 etching
>
> Frank
> Could you kindlyl explain to us on the role of forming gas (N2/H2 10%) in
> CF4 / O2 PR plasma ashing process. Approximate 15um spacer (PR) removal
> under superstructure process in ICP plasma chamber at ~800W RF
>
> Kind regards
> Joseph Chao
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