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MEMSnet Home: MEMS-Talk: photoresist (Shipley series) thinning using low r ate oxygen plasmaRIE
photoresist (Shipley series) thinning using low r ate oxygen plasmaRIE
2003-01-09
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photoresist (Shipley series) thinning using low rate oxygen plasmaRIE
2003-01-10
Oray Orkun Cellek
2003-01-10
[email protected]
photoresist (Shipley series) thinning using low r ate oxygen plasmaRIE
[email protected]
2003-01-09
> -----Original Message-----
> From: Wei Wei [mailto:[email protected]]
> Sent: Wednesday, January 08, 2003 3:31 PM
> To: [email protected]
> Subject: [mems-talk] photoresist (Shipley series) thinning using low
> rate oxygen plasmaRIE
> I try to use low oxygen plasma to thin my photoresist layer.
> If anybody
> have experience on this? Can you provide a receipe to control the
> etching rate under 100nm/min?
> Thanks,
> Alex

Just reduce the plasma power to slow the etch rate.
As an example in a Technics PEII-A parallel-plate plasma etcher,
with oxygen at 300 mTorr,
at 400 W photoresist etches at about 350 nm/min;
at  50 W photoresist etches at about  35 nm/min.

        --Kirt Williams Agilent Technologies

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