Hi Jamil,

We, in Hymite, are also interested.
I didn't find an SOI vendor who has the experience to do the bonding
with SiN.

If you have any interesting links to research works in that direction I
would very much like to hear about it.

Thanks,
Lior Shiv, M.Sc. Phys.
Team Leader
Hermetic packaging

Hymite A/S
DTU, Bldg. 325
DK-2800 Kgs. Lyngby

Tel:     +45 4525 9140
Direct: +45 4525 9144
Mobil:  +45 2674 4368
Fax:    +45 4525 9156
           lsh@hymite.com
           www.hymite.com

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-----Original Message-----
From: Jamil El-Ali [mailto:jea@mic.dtu.dk]
Sent: 5. februar 2003 11:37
To: General MEMS discussion
Subject: JO: [mems-talk] Buried silicon nitride


Hi All,
I am interesting in obtaining some SOI wafers with a buried silicon
nitride layer instead of an oxide layer. I have searched the net and it
seems like there are some research in progress making such SOI wafers by
nitrogen implantation, an alternative to the SIMOX process. Does anyone
know if such SOI wafers are commercial available?

I guess it should also be possible to fabricate buried nitride SOI wafer
by standard bonding and cleaving, but I have not been able to find any
information so far.

Regards,

Jamil El-Ali

Jamil El-Ali
Mikroelektronik centret, MIC
The Technical University of Denmark, DTU
Building 345 East
Dk-2800 Lyngby
Denmark

E-Mail: Jea@mic.dtu.dk
Direct phone: +45 45256319
fax: +45 45887762

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