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Dear colleagues,

We are etching thick film polyimides such as OCG Probimide 7005 with an
oxygen plasma barrel etcher. We find that a thin dielectric layer remains
following the oxygen plasma etch at temperatures as high as 150 C. Could
anyone tell us what the nature of the remaining 20 to 50 nm film is and
how we can selectively remove this film without etching underlying LTO
and metal films.

C. Sun
Microelectronics Center
NJIT
e-mail: cxs3530@megahertz.njit.edu