Hello

I am interested in using gold eutectic bonding to bond two silicon
wafers.  I  plan to first deposit Cr ( 50-100A) and then deposit
Au(1500A) on a plain silicon wafer. After deposition,  I plan  to dice
the wafer ( to conduct a number of bonding trials from a single wafer )
but have realized that dicing will introduce impurities which will not
allow me to get good bonding results.  I also found that though the
eutectic temp. of Gold/Si is 363 degrees centigrade, eutectisation is
noticable only around 400-450 centigrade. ( I am currently using a
simple heater to heat the samples).  .

If you have any tips or ideas which you feel might help me, please do
email me. .

Thank you

Vivek Prabhu

Dept. Electrical Engineering and Applied Physics
CWRU